KSM8P10 100v p-channel mosfet general description these p-channel enhancement mode power field effect transistors are produced using planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. features ? -8.0a, -100v, r ds(on) = 0.53 ? @v gs = -10 v ? low gate charge ( typical 12 nc) ? low crss ( typical 30 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter KSM8P10 units v dss drain-source voltage -100 v i d drain current - continuous (t c = 25c) -8.0 a - continuous (t c = 100c) -5.7 a i dm drain current - pulsed (note 1) -32 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 150 mj i ar avalanche current (note 1) -8.0 a e ar repetitive avalanche energy (note 1) 6.5 mj dv/dt peak diode recovery dv/dt (note 3) -6.0 v/ns p d power dissipation (t c = 25c) 65 w - derate above 25c 0.43 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 2.31 c / w r cs thermal resistance, case-to-sink 0.5 -- c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w to-220 s d g kersemi proprletary 2014-6-16 www.kersemi.com 1
(note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -100 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.1 -- v/c i dss zero gate voltage drain current v ds = -100 v, v gs = 0 v -- -- -1 a v ds = -80 v, t c = 150c -- -- -10 a i gssf gate-body leakage current, forward v gs = -30 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 30 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -4.0 a -- 0.41 0.53 ? g fs forward transconductance v ds = -40 v, i d = -4.0 a -- 4.3 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 360 470 pf c oss output capacitance -- 120 155 pf c rss reverse transfer capacitance -- 30 40 pf switching characteristics t d(on) turn-on delay time v dd = -50 v, i d = -8.0 a, r g = 25 ? -- 11 30 ns t r turn-on rise time -- 110 230 ns t d(off) turn-off delay time -- 20 50 ns t f turn-off fall time -- 35 80 ns q g total gate charge v ds = -80 v, i d = -8.0 a, v gs = -10 v -- 12 15 nc q gs gate-source charge -- 3.0 -- nc q gd gate-drain charge -- 6.4 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -8.0 a i sm maximum pulsed drain-source diode forward current -- -- -32 a v sd drain-source diode forward voltage v gs = 0 v, i s = -8.0 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -8.0 a, di f / dt = 100 a/ s -- 98 -- ns q rr reverse recovery charge -- 0.35 -- c KSM8P10 2014-6-16 www.kersemi.com 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 0 5 10 15 20 25 0.0 0.3 0.6 0.9 1.2 1.5 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 2 46810 10 -1 10 0 10 1 175 25 -55 notes : 1. v ds = -40v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : -15.0 v -10.0 v -8.0 v -7.0 v -6.5 v -5.5 v -5.0 v bottom : -4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 v ds = -50v v ds = -20v v ds = -80v note : i d = -8.0 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 900 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] -v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics KSM8P10 2014-6-16 www.kersemi.com 3
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 2.31 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 175 0 2 4 6 8 10 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = -10 v 2. i d = -4.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 KSM8P10 2014-6-16 www.kersemi.com 4
charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms KSM8P10 2014-6-16 www.kersemi.com 5
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSM8P10 2014-6-16 www.kersemi.com 6
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